View IRFS3107PBF_5013572.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD -97144
IRFS3107PBF IRFSL3107PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
D
HEXFET(R) Power MOSFET
VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)
D
75V 2.5m: 3.0m: 230A c 195A
S
D
S G
G
D
S
D2Pak IRFS3107PBF
TO-262 IRFSL3107PbF
G
D
S
Gate
Drain
Max.
230c 160 195 900 370 2.5 20 14 -55 to + 175 300 10lbxin (1.1Nxm) 300 See Fig. 14, 15, 22a, 22b,
Source
Units
A
Absolute Maximum Ratings
Symbol
ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS dv/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery f Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
W W/C V V/ns
C
Avalanche Characteristics
EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy e Avalanche Current d Repetitive Avalanche Energy g mJ A mJ
Thermal Resistance
Symbol
RJC RJA
Parameter
Junction-to-Case kl Junction-to-Ambient (PCB Mount) jk
Typ.
--- ---
Max.
0.40 40
Units
C/W
www.irf.com
1
10/7/08
IRFS/SL3107PbF
Static @ TJ = 25C (unless otherwise specified)
Symbol
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS RG
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance
Min. Typ. Max. Units
75 --- --- 2.0 --- --- --- --- --- --- 0.09 2.5 --- --- --- --- --- 1.2 --- --- 3.0 4.0 20 250 100 -100 ---
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 5mAd m VGS = 10V, ID = 140A g V VDS = VGS, ID = 250A A VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR)
Parameter
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd)
Min. Typ. Max. Units
--- 160 38 54 106 19 110 99 100 9370 840 580 1130 1500 --- 240 --- --- --- --- --- --- --- --- --- --- --- S nC
Conditions
VDS = 50V, ID = 140A ID = 140A VDS =38V VGS = 10V g ID = 140A, VDS =0V, VGS = 10V VDD = 49V ID = 140A RG = 2.7 VGS = 10V g VGS = 0V VDS = 50V = 1.0 MHz, See Fig. 5 VGS = 0V, VDS = 0V to 60V i, See Fig. 11 VGS = 0V, VDS = 0V to 60V h
230 --- --- --- --- Turn-On Delay Time --- Rise Time --- Turn-Off Delay Time --- Fall Time --- Input Capacitance --- Output Capacitance --- Reverse Transfer Capacitance --- Effective Output Capacitance (Energy Related) --- Effective Output Capacitance (Time Related)h ---
ns
pF
Diode Characteristics
Symbol
IS ISM VSD trr Qrr IRRM ton
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) d Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- 230c --- 900 A A
Conditions
MOSFET symbol showing the integral reverse
G S D
--- --- 1.3 V --- 54 --- ns --- 60 --- --- 103 --- nC --- 132 --- --- 3.6 --- A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
p-n junction diode. TJ = 25C, IS = 140A, VGS = 0V g VR = 64V, TJ = 25C IF = 140A TJ = 125C di/dt = 100A/s g TJ = 25C TJ = 125C TJ = 25C
Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.045mH RG = 25, IAS = 140A, VGS =10V. Part not recommended for use above this value .
ISD 140A, di/dt 1380A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as When mounted on 1" square PCB (FR-4 or G-10 Material). For recom R is measured at TJ approximately 90C RJC value shown is at time zero.
Coss while VDS is rising from 0 to 80% VDSS. mended footprint and soldering techniques refer to application note #AN-994.
2
www.irf.com
IRFS/SL3107PbF
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 4.8V 4.5V
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 4.8V 4.5V
ID, Drain-to-Source Current (A)
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
100
4.5V
4.5V
60s PULSE WIDTH Tj = 25C
10 0.1 1 10 100
60s PULSE WIDTH Tj = 175C
10 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
2.5
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
ID = 140A
2.0
ID, Drain-to-Source Current()
VGS = 10V
100
TJ = 175C
(Normalized)
TJ = 25C
10
1.5
1.0
VDS = 25V
1 2.0 3.0 4.0 5.0
60s PULSE WIDTH
6.0 7.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
16000 VGS = 0V, f = 100 kHz Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
Fig 4. Normalized On-Resistance vs. Temperature
16
VGS, Gate-to-Source Voltage (V)
ID= 140A 12
VDS = 60V VDS = 38V
12000
C, Capacitance (pF)
Ciss
8000
8
4000
4
Coss Crss
0 1 10 100
0 0 40 80 120 160 200 240 QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
www.irf.com
3
IRFS/SL3107PbF
1000
10000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
TJ = 175C
100
OPERATION IN THIS AREA LIMITED BY R DS (on) 100sec
1000
100 1msec 10
LIMITED BY PACKAGE
10
TJ = 25C
10msec 1 Tc = 25C Tj = 175C Single Pulse 0.1 1 10
1
VGS = 0V
0.1 0.0 0.5 1.0 1.5 2.0 2.5
DC
0.1 100
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
100
250 LIMITED BY PACKAGE 200
ID , Drain Current (A)
ID = 5mA
90
150
100
80
50
0 25 50 75 100 125 150 175 TC , Case Temperature (C)
70 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (C)
Fig 9. Maximum Drain Current vs. Case Temperature
4.0
Fig 10. Drain-to-Source Breakdown Voltage
1400
EAS, Single Pulse Avalanche Energy (mJ)
1200 1000 800 600 400 200 0
3.0
ID 21A 49A BOTTOM 140A
TOP
Energy (J)
2.0
1.0
0.0 0 20 40 60 80
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting TJ, Junction Temperature (C)
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
4
www.irf.com
IRFS/SL3107PbF
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20 0.10 0.05 0.02 0.01
J J 1 1 R1 R1 2 R2 R2 R3 R3 C 2 3 3
0.01
Ri (C/W)
(sec)
0.001
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci= i/Ri
0.047711 0.000071 0.16314 0.000881 0.189304 0.007457
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 0.001 0.01 0.1
0.0001 1E-006 1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse)
Avalanche Current (A)
100
0.01 0.05
10
0.10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C.
1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
350 300
EAR , Avalanche Energy (mJ)
TOP Single Pulse BOTTOM 1% Duty Cycle ID = 140A
250 200 150 100 50 0 25 50 75 100 125 150 175
Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Starting TJ , Junction Temperature (C)
Fig 15. Maximum Avalanche Energy vs. Temperature
www.irf.com
5
IRFS/SL3107PbF
4.5
32
VGS(th) Gate threshold Voltage (V)
4.0 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75
ID = 1.0A ID = 1.0mA ID = 250A
IRRM - (A)
24
16
8
IF = 90A VR = 64V TJ = 125C TJ = 25C 100 200 300 400 500 600 700 800 900
0
100 125 150 175
TJ , Temperature ( C )
dif / dt - (A / s)
Fig 16. Threshold Voltage Vs. Temperature
32
Fig. 17 - Typical Recovery Current vs. dif/dt
800
24
600
QRR - (nC)
IRRM - (A)
16
400
8
IF = 135A VR = 64V TJ = 125C TJ = 25C 100 200 300 400 500 600 700 800 900
200
IF = 90A VR = 64V TJ = 125C TJ = 25C 100 200 300 400 500 600 700 800 900
0
0
dif / dt - (A / s)
dif / dt - (A / s)
Fig. 18 - Typical Recovery Current vs. dif/dt
800
Fig. 19 - Typical Stored Charge vs. dif/dt
600
QRR - (nC)
400
200
IF = 135A VR = 64V TJ = 125C TJ = 25C 100 200 300 400 500 600 700 800 900 1000
0
dif / dt - (A / s)
6
Fig. 20 - Typical Stored Charge vs. dif/dt
www.irf.com
IRFS/SL3107PbF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 22a. Unclamped Inductive Test Circuit
VDS VGS RG RD
Fig 22b. Unclamped Inductive Waveforms
VDS 90%
D.U.T.
+
- VDD
V10V GS
Pulse Width 1 s Duty Factor 0.1 %
10% VGS
td(on) tr t d(off) tf
Fig 23a. Switching Time Test Circuit
Current Regulator Same Type as D.U.T.
Fig 23b. Switching Time Waveforms
Id Vds Vgs
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
www.irf.com
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
7
IRFS/SL3107PbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS SEMBLY LINE "C" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER
DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C
OR
INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER
DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBLY S IT E CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com
IRFS/SL3107PbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L
OR
INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE P = DES IGNAT ES LEAD - FREE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = AS S EMBLY S IT E CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
IRFS/SL3107PbF
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059)
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/2008
10
www.irf.com

▲Up To Search▲

Price & Availability of IRFS3107PBF

	To Download IRFS3107PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .